スポンサーリンク
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Tolerance-Based Wafer Verification Methodologies with a Die-to-Database Inspection System
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- Reduction in pn Junction Leakage for Ni-Silicided Small Si Islands by Using Improved Convection Annealing
- Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
- Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
- Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors
- Electromigration of Al-0.5 wt%Cu with Nb-Based Liner Dual Damascene Interconnects
- Aberration Monitoring toward Wavefront Matching with Device Patterns