Tolerance-Based Wafer Verification Methodologies with a Die-to-Database Inspection System
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概要
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With a die-to-database inspection system using electron beam, we have constructed state-of-the-art verification methodologies for the design for manufacturability (DfM), process proximity correction (PPC), minimization of process errors and process fluctuations, and so on. The experimental methodologies make it possible to extract exact hotspots and result in short development turnaround time (TAT) in low $k_{1}$ lithography. In the methodologies, the die-to-database inspection system, NGR-2100, has remarkable features for the full-chip inspection within reasonable operating time. This system is equipped with tolerance-based “verifiers” and provides higher hotspot extraction accuracy than the conventional optical inspection tool. As a result, hotspots extracted using the system included all killer hotspots extracted by electrical and physical analyses. In addition, the new methodologies are highly advantageous in that they shorten the development TAT by two to four months. In the application to 65-nm-node complimentary metal oxide semiconductor (CMOS) devices, we verified yield improvement using the proposed methodologies.
- 2009-07-25
著者
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Kotani Toshiya
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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INOUE Soichi
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Yoshida Kenji
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 3500 Matsuoka, Oita 870-0197, Japan
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Hashimoto Kohji
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Usui Satoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 3500 Matsuoka, Oita 870-0197, Japan
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Tanaka Satoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nojima Shigeki
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nagahama Ichirota
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nagano Osamu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Matsuoka Yasuo
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamazaki Yuuichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kotani Toshiya
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Inoue Soichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
関連論文
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- Optical Proximity Correction Feature Extraction Method Using Reticle Scanning Electron Microscope Images
- Tolerance-Based Wafer Verification Methodologies with a Die-to-Database Inspection System