Optical Proximity Correction Feature Extraction Method Using Reticle Scanning Electron Microscope Images

概要

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Optical proximity correction (OPC) features are frequently used in photolithography. It is necessary to measure the shape characteristics such as height, width, area, position of center of gravity, and corner-rounding with nm-order accuracy. For this purpose, critical-dimension scanning electron microscope (CD-SEM) images are utilized. However, it is difficult to extract the shape characteristics mentioned above from a corrected pattern with conventional CD-SEM measurement. The authors developed a method to extract the shape characteristics automatically from a corrected reticle pattern with high accuracy, with combination of discriminant analysis and nonlinear regression.
2003-06-15