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Process Group, Advanced Technology Laboratory, LG Semicon | 論文
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Rugged Metal Electrode (RME) for High Density Memory Devices : Surfaces, Interfaces, and Films
- Investigation of Ruthenium Electrodes for (Ba,Sr)TiO3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO3/Pt Capacitors for Dynamic Random Access Memory Applications