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Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.:(present)university | 論文

• Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
• Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
• (Ba, Sr)TiO_3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond
• Novel Pb(Ti,Zr)O_3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices
• Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices
• 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing

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