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Pohang Univ. Sci. And Technol. Kyungbuk Kor | 論文
- High Frequency Responses of YBa_2Cu_3O_ Josephson Junctions on Si Substrates Fabricated by Focused Electron Beam Irradiation
- Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
- Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
- A Low-Power Half-Swing Clocking Scheme for Flip-Flop with Complementary Gate and Source Drive
- Single-Chip Implementation of a 32-bit Motor-Drive-Specific Microcontroller with Floating-Point Unit (Special Issue on Integrated Electronics and New System Paradigms)
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- On Time-dependent Crack Growth Parameters in Plasticity and Creep Fields(Special Issue on Creep and Fatigue at Elevated Temperatures)
- Melting Heat Transfer along a Horizontal Heated Tube Immersed in Liquid Ice
- Spatially-Controllable Quantum Well Intermixing with Stripe-Size Dependence in AlGaAs Heterostructures
- Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
- Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
- Invited Effects of WSix-Polycide Gate Processes on MOSFET Reliability and Characteristics (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))