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Photonic and Wireless Devices Research Laboratories, NEC Corporation | 論文
- Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch(Joint Special Issue on Recent Progress in Optoelectronics and Communications)(OECC Awarded)
- Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Hybrid Integrated 8-Channel SOAG Receptacle Module with Driver Circuits
- Ultrafast 168 GHz 1.5 ps 1 fJ Symmetric-Mach-Zehnder-Type All-Optical Semiconductor Switch
- AIGaN/GaN Heterojunction FETs for High Power Applications
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
- Wavelength-Selectable Microarray Light Sources for DWDM Photonic Networks(Special Issue on Recent Progress of Integrated Photonic Devices)
- Robust 0.13-μm Gate HJFET with Low Fringing Capacitance
- RF Power Performance of AlGaN/GaN HJFETs
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope