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Paul‐drude‐inst. Festkoerperelektronik Berlin Deu | 論文
- 自己組織化InGaAs歪量子デイスクと半導体レーザ応用 (招待講演)
- GaAs(311) B基板上のInGaAs自己組織化現象と極微細レーザーへの応用
- 自己組織化InGaAsひずみ量子ディスクレーザー
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
- Self-Organization of Boxlike Microstructures on GaAs (311)B Surfaces by Metalorganic Vapor-Phase Epitaxy