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Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics | 論文
- InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
- Atomic Arrangement at the AlN/Si(110) Interface
- Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness