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Osaka Polytechnic College | 論文
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
- Gravity Anomaly and Inferred Basement Structure in Osaka Plain, Central Kinki, South-west Japan
- Improvement of the Measurement Precision in an X-Ray Stress Measurement Method for Very Small Areas on Single Crystals
- X-Ray Stress Measurement of Mounted Silicon Chips
- String Vibration Measuring System Correcting Effect of Negative Stiffness of Electromagnetic Transducer