X-Ray Stress Measurement of Mounted Silicon Chips

スポンサーリンク

概要

• 論文の詳細を見る

• Stresses in semiconductor silicon chips were measured by an X-ray stress measurement method that is applicable to microareas (60 μm dia.) of single crystals. The measurement was conducted before and after silicon chip mounting on a substrate. Also measured were residual stresses in areas around bumps. As a result, about +30 to +40 MPa tensile stresses were determined at the corners of the rear side of a test piece silicon chip, which was fixed with resin, and about +70 to +80 MPa tensile stresses were found near the solder-bump formed surface of another test piece silicon chip.

• 社団法人応用物理学会の論文
• 1997-12-15

著者

• Fujii Nobuyuki

  The Polytechnic University

• Fujii N

  The Polytechnic University

• INUI Katsunori

  Osaka Polytechnic College

• KOZAKI Shigeru

  Chiba Polytechnic College

• Kozaki S

  Chiba Polytechnic College

関連論文

• Improvement of the Measurement Precision in an X-Ray Stress Measurement Method for Very Small Areas on Single Crystals
• X-Ray Stress Measurement of Mounted Silicon Chips
• Residual Stress Measurement of Near Interface Region in Silicon Nitride and Stainless Steel Brazing Joint

スポンサーリンク