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Opto-Electronics Research Laboratories, NEC Corporation | 論文
- Two-Dimensional Optical Buses for Massively Parallel Processing
- Synchronous Injection Locking Operation of Monolithic Mode-Locked Diode Lasers
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Observation of a New CuPt-Type Ordered-Phase with Orientation in the [111]A Direction in Al_In_P Alloy
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
- Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy
- Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition : Impurity Doping and 590 nm (Orange) Electroluminescence
- MOCVD-Grown Al_In_P-Ga_In_P Double Heterostructure Lasers Optically Pumped at 90 K
- Encapsulated Thermal Oxidation for Ge-APDs Passivation
- P-Type Doping Effects on Band-Gap Energy for Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Optical Study of Strain-Induced GaAs Quantum Dots
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy
- Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy ( Quantum Dot Structures)
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- 632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection