Encapsulated Thermal Oxidation for Ge-APDs Passivation

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関連論文

Observation of a New CuPt-Type Ordered-Phase with Orientation in the [111]A Direction in Al_In_P Alloy
Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy
Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition : Impurity Doping and 590 nm (Orange) Electroluminescence
MOCVD-Grown Al_In_P-Ga_In_P Double Heterostructure Lasers Optically Pumped at 90 K
Encapsulated Thermal Oxidation for Ge-APDs Passivation

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