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Ntt Photonics Laboratories | 論文
- Effect of annealing on DLC characteristics by ESR spectral analysis
- UTC-PD-Based Optoelectronic Components for High-Frequency and High-Speed Applications(Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Two-Dimensional Weak Localization in Electron High-T_c Superconductor Nd(2-x) Ce_xCuO_y under High Magnetic Field
- Magnetoresistance Measurements of Single-Crystal LnBa_2Cu_3O_y (Ln=Ho,Dy,Eu and Y) under Pulsed High Magnetic Field
- 28a-YM-2 KEKの新粉末中性子回折装置
- Current and Wavelength Characteristics of Polarization-Insensitive SOAs with Strained-Bulk Active Layers
- High Resolution Neutron Spectrometer LAM-80ET and Rotational Tunnelling in 4-Methypyridine N-Oxide
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- Design of Bending Waveguide Based Semiconductor Polarization Rotators
- Design of Bending Waveguide Based Semiconductor Polarization Rotators
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs