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Ntt Microsystem Integration Laboratories | 論文
- 10-Mbps Short-Range Baseband Wireless Communications via Quasi-Static Electric Fields
- Unique Shapes of Micro-Pits Formed in an Al-Pd-Mn Icosahedral Quasicrystal by Anodic Etching
- Determination of Quasi-Crystallographic Orientations of Al-Pd-Mn Icosahedral Phase by Means of Light Figure Method
- Evaluation of a Diabetes Patient Education Program Consisting of a Three-Day Hospitalization and a Six-Month Follow-Up by Telephone Counseling for Mild Type 2 Diabetes and IGT
- Polarization splitter and rotator for polarization diversity system in silicon-based micro-photonic circuits (光エレクトロニクス)
- Low-Loss Si Wire Waveguides and their Application to Thermooptic Switches (Special Issue: Microoptics)
- Microphotonics Devices Based on Silicon Wire Waveguiding System(Photonic Crystals and Their Device Applications)
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
- An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- Preparation of BiSrCaCuO Multilayers by Use of Slower Q-Switched 266nm YAG Laser : Superconductors
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- A 15-Gbit/s Si-Bipolar Gate Array
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors