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New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd. | 論文
- Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists
- Molecular Resists Based on Cholate Derivatives for Electron-Beam Lithography
- Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography
- Outgassing Analysis in EUV Resist
- New Photoresist Based on Amorphous Low Molecular Weight Polyphenols
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- Characteristics of CA Resist in EUV Lithography
- Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography
- Molecular Resists Based on Cholate Derivatives for Electron-Beam Lithography