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New Industry Creation Hatchery Center, Tohoku University | 論文
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
- Fabrication of High-Quality Perovskite Oxide Films by Lateral Epitaxy Verified with RHEED Oscillation
- Two-Dimensional Epitaxial Growth of SrTiO_3 Films on Carbon-Free Clean Surface of Nb-Doped SrTiO_3 Substrate by Laser Molecular Beam Epitaxy
- SIM-11 A NEW APPROACH ON CALCULATION OF VISCOSITIES OF COMPLEX LIQUIDS USING ULTRA-ACCELERATED QUANTUM CHEMICAL MOLECULAR DYNAMICS(Simulations of Micro/Nano Scale Phenomena III,Technical Program of Oral Presentations)
- A Technology for Reducing Flicker Noise for ULSI Applications
- High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
- Reevaluation of Quantitative ESR Spin Trapping Analysis of Hydroxyl Radical by Applying Sonolysis of Water as a Model System
- Proposed Mechanisms for HOOOH Formation in Two Typical Enzyme Reactions Responsible for Superoxide Anion Production in Biological Systems
- Existence of a New Reactive Intermediate Oxygen Species in Hypoxanthine and Xanthine Oxidase Reaction
- Some Dinophycean Red Tide Plankton Species Generate a Superoxide Scavenging Substance
- Antioxidant Properties of Aqueous Extracts from Red Tide Plankton Cultures
- A Discrepancy in Superoxide Scavenging Activity between the ESR-Spin Trapping Method and the Luminol Chemiluminescence Method
- Nanomechanical Structure with Integrated Carbon Nanotube
- Pattern Transfer of Self-Ordered Structure with Diamond Mold
- Mechanical Energy Dissipation of Multiwalled Carbon Nanotube in Ultrahigh Vacuum
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain