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National Space Dev. Agency Of Japan Ibaraki Jpn | 論文
- Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
- Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Transmission-Type X-Ray Phase Retarder Using Ge Crystal in Laue Diffraction Geometry
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal