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National Space Dev. Agency Of Japan Ibaraki Jpn | 論文
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Three-dimensional Measurement of Marangoni Convection in a liquid bridge under Microgravity Conditions in the TR-IA-4 Sounding Rocket (特集 TR-IA4号機)
- Effect of Electric Field on Marangoni Convection under Microgravity
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
- A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- An X-Ray Phase Plate Using Bragg-Case Diffraction
- First Application of X-ray Refraction-based Computed Tomography to a Biomedical Object(Physiology)
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon