スポンサーリンク
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
- Effect of Femtosecond Prepulse with Threshold Intensity for Optical Field Ionization on Electron Acceleration and Propagation of Intense Laser Pulse in Plasma
- Conductive-Mode Atomic Force Microscopy Study of Amorphous Silicon Nitride Thin Films
- Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)