スポンサーリンク
National Cheng Kung Univ. Tainan Twn | 論文
- Effect of Austempering Duration on Erosion Wear Resistance of ADI by Al_2O_3 Particle
- The Microstructural Effects on Tensile Properties and Erosion Wear Resistance in Upper Bainitic ADI Related to Variation in Silicon Content
- Effect of Morphology and Si Content on SiO_2 Particle Erosion of Full Pearlitic Spheroidal Graphite Cast Iron
- Effect of Si Content on SiO_2 Particle Erosion of Spheroidal Graphite Cast Iron
- Effect of Aging on the Crack Propagation Behavior of A356 Alloy under Resonant Vibration
- FISSOLDHIMINE, A NOVEL SKELETON ALKALOID FROM FISSISTIGMA OLDHAMII
- Cytotoxic and Anti-HIV Principles from the Rhizomes of Begonia nantoensis
- Polymer-Stabilized Reflective Fingerprint Cholesteric Texture Grating
- Scattering Light Interference from Liquid Crystal Polymer Dispersion Films
- Polymer Network Formed in Liquid Crystals: Polymer-Network-Induced Birefringence in Liquid Crystals
- Polymer-Dispersed Liquid Crystal Films:Interference Pattern Recording and Its Application
- The Characterization of Surface Acoustic Wave Modes on Rotated Y-Cut Quartz (ST-X Quartz) with Different AIN Film Thickness
- Temperature Compensation With AlN Film on Y-128° LiNbO_3 : Surfaces, Interfaces, and Films
- Characteristic of Surface Acoustic Wave Gas Sensor with Resonator Structure (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts