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Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University | 論文
- Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method
- Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers
- Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers
- Disappearance of Step Decoration on Electron Irradiated Surfaces of NaCl
- Direct observation of dynamic force propagation between focal adhesions of cells on microposts by atomic force microscopy
- Photoluminescence of GaAs Tip Apex Excited by Evanescent Wave
- Evidence for Strong Electron-Magnon Coupling in Gadolinium
- Spin-Polarized Electron Injection through an Fe/InAs Junction