スポンサーリンク
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo | 論文
- Non-Volatile Resistance Switching Using Silicon Nanogap Junction
- Measurements of Electrostatic Potential Across p--n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy
- Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
- High Electron Mobility Ge n-Channel Metal--Insulator--Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique
- Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy
- Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface
- Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects