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Nano-device Research Center Korea Institute Of Science And Technology | 論文
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Enhanced Optical Properties of High-Density (>10^/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Study of Chirped Quantum Dot Superluminescent Diodes
- Characteristics of Superluminescent Diodes Utilizing In_Ga_As Quantum Dots
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical Communication (先端デバイスの基礎と応用に関するアジアワークショップ)
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy