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Nan Jeon Inst. Of Technol. Yan‐hsui Twn | 論文
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Plasma Treatment and Dry Etch Characteristics of Organic Low-k Dielectrics
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- A Decoupled Capacitance Measurement Technique for Characterization of Small-Geometry MOSFETs with Ultra-Thin Gate Oxides