スポンサーリンク
Nagoya University, Nagoya 464-8603, Japan | 論文
- Measurement of Negative Ions Generated on the Si Etched Surface
- 18-GHz, 4.0-aJ/bit Operation of Ultra-Low-Energy Rapid Single-Flux-Quantum Shift Registers
- Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
- A Fiber-Laser Pumped, High-Power Terahertz Wave Source Based on Optical Rectification of Femtosecond Pulses in 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Crystal
- Luminescence of Acceptors in Mg-Doped GaN
- In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption
- Field Emissions from Organic Nanorods Armored with Metal Nanoparticles
- Calibrations of Fast Ion Flux Measurement Using a Hybrid Directional Probe
- Field Emissions from Organic Nanorods Armored with Metal Nanoparticles
- Chemical reactions during plasma-enhanced atomic layer deposition of SiO