Measurement of Negative Ions Generated on the Si Etched Surface

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概要

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• Negative ions emerging from etched Si surface were measured in $\text{CF$_{4}$}+\text{O$_{2}$}$ mixed capacitive coupled plasmas (CCP) in order to observe the surface reaction in real time. Carbon containing negative ions were observed in the low O₂ concentration mixed plasma, and C₂F₄- ion was observed in the high O₂ concentration mixed plasma. C₂F₃- and C₂F₄- ions abruptly increased at around the O₂ mixing ratio of 15%.

• 2011-08-25

著者

• Sato Fumihiko

  Nagoya University, Nagoya 464-8603, Japan

• Mizutani Naoki

  ISET, ULVAC Inc., Susono, Shizuoka 410-1231, Japan

• Hayashi Toshio

  Nagoya University, Nagoya 464-8603, Japan

• Murai Sonomi

  Nagoya University, Nagoya 464-8603, Japan

• Kono Akihiro

  Nagoya University, Nagoya 464-8603, Japan

• Suu Koukou

  ISET, ULVAC Inc., Susono, Shizuoka 410-1231, Japan

関連論文

• Measurement of Negative Ions Generated on the Si Etched Surface

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