In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption

スポンサーリンク

概要

• 論文の詳細を見る

• We have used surface photo-absorption (SPA) to investigate the formation of negative electron affinity (NEA) surfaces on p-GaAs during the Yo-Yo method, under an alternating supply of Cs and O<inf>2</inf>. The SPA spectra showed that the surface during the first Cs step was different from those in the following Cs and O<inf>2</inf>steps. This suggests that the surface structure did not change after the initial surface was formed, indicating that there could be two Cs adsorption sites on the GaAs surface, which is different from previously proposed models.

• 2013-06-25

著者

• Suzuki Katsunari

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

• Hasegawa Jun-ichi

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

• Meguro Takashi

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

• Hayase Kazuya

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

• Nishitani Tomohiro

  Nagoya University, Nagoya 464-8603, Japan

• Imai Hironobu

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

• Namba Daiki

  Tokyo University of Science, Sinjuku, Tokyo 162-8601, Japan

関連論文

• In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption

スポンサーリンク