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NTT System Electronics Laboratories | 論文
- Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
- Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
- Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
- Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
- Fabrication of Fe-Te-S Superconducting Epitaxial Thin Films by Pulsed Laser Deposition
- Effect of c-Axis-Correlated Disorders on the Vortex Diagram of the Pinning State
- Critical Current Density Enhancement around a Matching Field in ErBa_2Cu_3O_ Films with BaZrO_3 Nano-Rods
- An Effective Routing Methodology for Gb/s LSIs Using Deep-Submicron Technology
- A Fully Depleted CMOS/SIMOX LSI Scheme Using a LVTTL-Compatible and Over-2,000-V ESD-Hardness I/O Circuit for Reduction in Active and Static Power Consumption (Special Issue on SOI Devices and Their Process Technologies)
- Fabrication and Microstructure of All In-plane Aligned A-Axis Oriented Superconductor/Insulator/Superconductor Junctions
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
- レーザーアブレーション法によるL_nBCO薄膜の作製
- 超伝導
- 超伝導
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode