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Musashino Electrical Communication Laboratory N.t.t. | 論文
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Vapor Phase Epitaxial Growth and Characterization of Ga_In_yAs_P_x Quaternary Alloys
- Phase Diagram of the GaAs_Sb_x System
- Study on Spherical Foil Bearing : 1st Report, Analysis for Perfectry Flexible Foil
- Magnetic Tape Deformation under a Concentrated Load
- Study on Spherical Foil Bearing : 2nd report Analysis including foil bending stiffness and its experimental verification
- Study on Spherical Foil Bearing : 3rd Report, Analysis for Large Bearing Penetration
- High Speed C-MOS IC Using Buried SiO_2 Layers Formed by Ion Implantation : A-3: LASER ANNEALING/SOS DEVICES
- On the Church-Rosser Property for the direct sum of Term Rewriting Systems(Lambda Calculus and Computer Science Theory)
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Impurity Effect on Interface Morphology of AlGaAs LPE on Corrugated GaAs Substrates
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃