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Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University | 論文

• Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current-Voltage Characteristics of Resonant Tunneling Diodes
• High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
• Boron Delta-Doped Si- and Ge_Si_-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
• Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
• Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
• Observation of Negative Differential Resistance Phenomena in Porous Silicon Superlattice Structures

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