スポンサーリンク
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation | 論文
- DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
- Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- Phase Ambiguity Resolver for PCM Sound Broadcasting Satellite Service with Low Power Consumption Viterbi Decoder Employing SST Scheme
- VLSI Implemented 60 Mb/s QPSK/OQPSK Burst Digital Demodulator for Radio Application (Special Issue on Multimedia, Analog and Processing LSIs)
- A New Fully-Digitalized π/4-Shift QPSK Modulator for Personal Communication Terminals (Special Issue on Personal, Indoor and Mobile Radio Communications)
- A Digitalized Quadrature Modulator for Fast Frequency Hopping
- In-plane Orientation and Coincidence Site Lattice Relation of Bi_2Sr_2CaCu_2O_x Thin Films Formed on Highly Mismatched (001) YAG Substrates
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
- Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
- Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
- Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
- Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
- Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
- Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
- A Channel Equalization Technique on a Time Division Duplex CDMA/TDMA System for Wireless Multimedia Networks
- A Transmission Power Control Technique on a TDD-CDMA/TDMA System for Wireless Multimedia Networks
- A Wireless Multimedia Network on a Time Division Duplex CDMA/TDMA
- Dielectric Properties of (Ba_xSr_)TiO_3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)