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MIRAI-ASET, AIST | 論文
- Reliable Extractions of EOT and V_ in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Nonlinear Al Concentration Dependence of the HfAlO_x/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy
- Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics