スポンサーリンク
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China | 論文
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Achieving Multiple Resistance States in Phase-Change Memory Cell
- Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer
- Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
- Temperature Influence on Electrical Properties of Sb–Te Phase-Change Material
- First-Principles Study of Equilibrium Properties and Electronic Structures of GeTe–Sb2Te3 Pseudobinary Crystalline Films
- Investigation of Compositional Gradient Phase Change SixSb2Te3 Thin Films