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LG Semicon Co., Ltd. | 論文
- Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- P and As Implantation Enhanced Formation of Metal-Free Oxide on WSi_2
- Effects of Oxidation Ambient and Low Temperature Post Oxidation Anneal on the Silicon/Oxide Interface Structure and the Electrical Properties of the Thin Gate Oxide