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Kyushu Electronic Metal Co. Ltd | 論文
- Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
- Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
- Dependence of Gettering Efficiency on Metal Impurities
- TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
- TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface : Condensed Matter
- Degradation of Gate Oxide Integrity by Metal Impurities
- Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces