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Kohgakuin Univ. Tokyo Jpn | 論文
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Basic Properties of Magnetostrictive Actuators Using Tb-Fe and Sm-Fe Thin Films (Special Issue on Micromachine Technology)