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Kanagawa Industrial Technology Research Institute | 論文
- NMR study on the formation mechanism of β-SiAlON from zeolite by nitridation using ammonia gas
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Application of Microchip Fabricated of Photosensitive Glass for Thermal Lens Microscopy : Instrumentation, Measurement, and Fabrication Technology
- On the Turbulent Structures of Flows over a Traveling Wave Train
- Evaluation of Inter- and Intrafraction Organ Motion during Intensity Modulated Radiation Therapy (IMRT) for Localized Prostate Cancer Measured by a Newly Developed On-board Image-guided System
- Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings
- Shunting arc generation and deposition of amorphous carbon
- Preparation of TiN film on an Φ80mm pipe by DC vacuum cathodic arc deposition and PBII
- Per-C-6 Oligosaccharide-Branched Cyclodextrin Interacting with Both the Lectin and Drug
- Zr-based Hydrogen Absorbing Films Prepared by Ion Beam Assisted Deposition(Physics, Processes, Instruments & Measurements)
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Tribological Property of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- 15-O-14 Epitaxial Growth of Beta-Iron Disilicide on Single Crystal Insulator
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Antiproliferative Constituents from Umbelliferae Plants VI. New Ursane-Type Saikosaponin Analogs from the Fruits of Bupleunim rotundifolium
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Effect of Alumina Content on the Mechanical Properties of Alumina Particle Dispersion Magnesium
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- Fabrication of Al_In_xN films at the Resonance point of Nitrogen-ECR plasma