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Kanagawa High-Technology Foundation, Kanagawa Science Park | 論文
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters
- Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
- Assessing Aptitude of Plated Ni–W Film as Mold Materials for Borosilicate Glass
- Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma