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Jst‐crest Ibaraki Jpn | 論文
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Molecular Ordering Deformation Induced by Externally Applied Electric Field in an Antiferroelectric Liquid Crystal
- O-1 Probable Langevin-like director-reorientation in an interface-induced disordered state of liquid crystals characterized by frustration between ferro- and antiferro-electricity
- Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
- Holographic Recording in Cerium Doped Strontium Barium Niobate α-Axis Single Crystal Fibers : Future Technology
- Holographic Recording in Cerium Doped Strontium Barium Niobate α-Axis Single Crystal Fibers
- Photorefractive Properties of Ce-Doped Strontium Barium Niobate Single-Crystal Fibers at 830 nm
- Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
- Self-Aligned Inversion-Mode lnP MISFET
- InP PN Junction Waveguide Made by Mg-Ion Implantation
- Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
- Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
- Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
- MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
- A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
- InP MESFET Grown by MOCVD