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Japan Aviation Electronics Ind. Ltd. Tokyo Jpn | 論文
- Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
- High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
- Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Crystal Structure Refinement of (Pb_Ca_x)ZrO_3 by the Rietvelt Method
- Dielectric Properties of Pb-Based Perovskite Substituted by Ti for B-site at Microwave Frequencies
- Dielectric Properties of (PbCa)(MeNb)O_3 at Microwave Frequencies
- Dielectric Properties of Lead Alkaline-Earth Zirconate at Microwave Frequencies : Dielectric Properties
- Dependence of Lock-in Threshold and Winking Pattern on the Phase-Interaction of Scattering Waves in the Ring Laser
- Optical Fiber Coupler Array for Multi-Point Sound Field Measurements