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Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea | 論文
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory
- Non-Quasi-Static Modeling of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
- Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
- Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure
- Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
- Dynamic driving current using side gate bias of single-electron transistors
- Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory
- Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits
- A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device
- L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications