スポンサーリンク
Institute of Quantum Information Processing and Systems, University of Seoul | 論文
- Fabrication of single electron transistors with molecular tunnel barriers using AC dielectrophoresis technique
- A transmission-type radio-frequency single-electron transistor (RF-SET) with an in-plane-gate SET (IPG-SET)
- Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006)
- Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006)
- Magnetic capture of a single magnetic nanoparticle using nano-electromagnets
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Electrical Transport Properties of Au-Doped DNA Molecules
- Controllable Electromagnetic Capture of Nano-particles and Nano-device Applications
- Controllable Electromagnetic Capture of Nano-particles and Nano-device Applications
- Relativistic Entanglements of Spin 1/2 Particles with General Momentum(Condensed Matter and Statistical Physics)
- Genotype-environment interactions affect flower and fruit herbivory and plant chemistry of Arabidopsis thaliana in a transplant experiment
- Controllable Electromagnetic Capture of Nano-particles and Nano-device Applications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Controllable Electromagnetic Capture of Nano-particles and Nano-device Applications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Nano-electronics Technology : Fabrication and characterization of various quantum dot devices
- Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well
- Invited Orbital quantum bits based on the inter-valley interactions in Si quantum dots (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))