スポンサーリンク
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 | 論文
- Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors
- Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack
- Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
- Low Temperature Metal-Induced Lateral Crystallization of Si1-xGex Using Silicide/Germanide-Forming-Metals
- Lasing from a One-Dimensional Photonic Crystal Made of Dye-Doped Holographic Polymer-Dispersed Liquid Crystal Gratings