スポンサーリンク
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan | 論文
- Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
- High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
- Giant Second Harmonic Generation from Metastable BaTi2O5
- Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
- Filtering for the Inverse Problem of Convection-Diffusion Equation with a Point Source
- Stability Analysis of Stochastic Neural Network with Depression and Facilitation Synapses
- Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
- Nanoindentation Fracture Behaviors of Diamond-Like Carbon Film on Aluminum Alloy with Different Interface Toughnesses
- Site-Selective Calcium Substitution in BaTi2O5: Effect on the Crystal Structure and the Ferroelectric Phase Transition
- Ultra-Conformal Metal Coating on High-Aspect-Ratio Three-Dimensional Structures Using Supercritical Fluid: Controlled Selectivity/Non-Selectivity
- Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
- Electro-Mechanical Q Factor Control of Photonic Crystal Nanobeam Cavity
- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
- Ultrasensitive Far-Infrared Phototransistors Fabricated in Superlattice Structures
- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires