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Institute of Electronics Engineering, National Tsing Hua University | 論文
- A Fully Integrated SiGe Optical Receiver Using Differential Active Miller Capacitor for 4.25Gb/s Fiber Channel Application
- A High Performance Photodetector Suitable for Visible Light and Near IR Applications
- 2.4 and 5.2GHz Dual-Band Antenna Fabricated on Flexible Parylene Membrane
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
- Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming
- Characteristics Improvement of Phase Change Memory with Programming Pulse Width
- Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
- Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
- Low-Concentration GaSb Avalanche Photodiodes Grown by Liquid-Phase Epitaxy Using the Compensation Method
- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
- Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
- Growth and Characterization of In_Ga_As_P_ Layers by Liquid-Phase Epitaxy Using Erbium Gettering
- Effects of Sulfide Treatment of Indium Tin Oxide on Efficiency of Polymer Light-Emitting Diodes
- High-Performance Film Bulk Acoustic Wave Pressure and Temperature Sensors
- A New Control Chip for an Electronic Circuit Breaker Using 0.6um CMOS Technology
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress