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Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio | 論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design
- Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
- Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography