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Indian Assoc. Cultivation Of Sci. Kolkata Ind | 論文
- Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
- Influence of Chamber Pressure on Optoelectronic and Structural Properties of Boron-Doped Hydrogenated Silicon Films Prepared by RF Magnetron Sputtering
- Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- Polar Optic Phonon Scattering Limited-Mobility in Narrow Quantum Wells
- The Growth of Crystallinity in Undoped SiO:H Films at Low RF-Power Density and Substrate Temperature : Semiconductors
- Some Properties of Intrinsic and Phosphorus Doped Amorphous Silicon Thin Films
- Properties of Vacuum-Evaporated CdS Thin Films
- Role of Substrate Tenlperature on the Properties of Microcrystalline Silicon Thin Films : Semiconductors
- On the Inversion from the Energy Dependence of Total Cross-Sections
- Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique
- Properties of Tellurium Doped Vacuum Evaporated CdS Thin Films
- AC Conductivity of Amorphous Fe_2O_3-Bi_3O_3 Oxide Glasses