Some Properties of Intrinsic and Phosphorus Doped Amorphous Silicon Thin Films

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概要

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• The dark conductivity σ_D and the photoconductivity σ_<Ph> of intrinsic and n-type (phosphorus doped) a-Si : H films prepared by rf glow discharge of silane gas has been studied. The samples have been prepared under different experimental conditions which include change of rf power, substrate temperature and dopant concentration. The most significant result has been the change in dark conductivity and photoconductivity with the change of rf power within a limited range of 2 to 30 Watts. As shown by infrared spectroscopy the chances in σ_D and σ_<Ph> with rf power are mainly due to the change of hydrogen content. The appearance of a kink in σ_D vs 1/T plot (at T' with higher slope at T>T') has been explained as due to the effect of statistical shift of the Fermi level E_F.

• 社団法人応用物理学会の論文
• 1983-01-20

著者

• Ray Swati

  Indian Assoc. Cultivation Of Sci. Kolkata Ind

• Batabyal A.k.

  Indian Association For The Cultivation Of Science

• CHAUDHURI P.

  Indian Association for the Cultivation of Science

• BARUA A.K.

  Indian Association for the Cultivation of Science

関連論文

• Some Properties of Intrinsic and Phosphorus Doped Amorphous Silicon Thin Films
• Properties of Vacuum-Evaporated CdS Thin Films
• On the Inversion from the Energy Dependence of Total Cross-Sections
• Properties of Tellurium Doped Vacuum Evaporated CdS Thin Films
• A Simple Modification of the Magnetron Sputtering Method for Deposition of Hydrogenated Amorphous Silicon Films with Improved Optoelectronic Properties : Condensed Matter
• Thermal Conductivity of Argon-Carbondioxide and Nitrogen-Carbondioxide Gas Mixtures

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