A Simple Modification of the Magnetron Sputtering Method for Deposition of Hydrogenated Amorphous Silicon Films with Improved Optoelectronic Properties : Condensed Matter

概要

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A simple modification of the magnetron sputtering system has been proposed to minimise damage of the growing film by ion bombardment, particularly at high rf powers. This is sought to be achieved by placing the substrate in the field of a permanent magnet. Using this modified set up, hydrogenated amorphous silicon thin films have been deposited at different rf powers. It has been found that at higher with the conventional magnetron sputtering configuration.
社団法人応用物理学会の論文
1988-10-20